A 4GHz, low latency TCAM in 14nm SOI FinFET technology using a high performance current sense amplifier for AC current surge reduction

Alexander Fritsch, Michael Kugel, Rolf Sautter, D. Wendel, J. Pille, O. Torreiter, S. Kalyanasundaram, Daniel Dobson
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引用次数: 6

Abstract

A 4GHz, low latency TCAM in 14nm SOI FinFET technology, using a matchline current sensing scheme with an energy consumption of 0.63 fJ/bit/search at 0.9V and a peak current reduction of 50% compared to voltage sensing implementations. A by entry adjustable search depth allows to reduce power consumption for variable size translation tables. The implemented sandwich floorplan enables an area efficient integration of high performance 0.286μm2 16T-TCAM and 0.143μm2 8T-SRAM cells.
采用14nm SOI FinFET技术的4GHz低延迟TCAM,采用高性能电流检测放大器来降低交流电流浪涌
14nm SOI FinFET技术的4GHz低延迟TCAM,采用匹配线电流传感方案,在0.9V时能耗为0.63 fJ/bit/搜索,与电压传感实现相比,峰值电流降低50%。按条目可调的搜索深度允许减少可变大小翻译表的功耗。所实现的三明治平面设计实现了高性能0.286μm2 16T-TCAM和0.143μm2 8T-SRAM单元的面积高效集成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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