Alexander Fritsch, Michael Kugel, Rolf Sautter, D. Wendel, J. Pille, O. Torreiter, S. Kalyanasundaram, Daniel Dobson
{"title":"A 4GHz, low latency TCAM in 14nm SOI FinFET technology using a high performance current sense amplifier for AC current surge reduction","authors":"Alexander Fritsch, Michael Kugel, Rolf Sautter, D. Wendel, J. Pille, O. Torreiter, S. Kalyanasundaram, Daniel Dobson","doi":"10.1109/ESSCIRC.2015.7313897","DOIUrl":null,"url":null,"abstract":"A 4GHz, low latency TCAM in 14nm SOI FinFET technology, using a matchline current sensing scheme with an energy consumption of 0.63 fJ/bit/search at 0.9V and a peak current reduction of 50% compared to voltage sensing implementations. A by entry adjustable search depth allows to reduce power consumption for variable size translation tables. The implemented sandwich floorplan enables an area efficient integration of high performance 0.286μm2 16T-TCAM and 0.143μm2 8T-SRAM cells.","PeriodicalId":11845,"journal":{"name":"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)","volume":"16 1","pages":"343-346"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2015.7313897","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A 4GHz, low latency TCAM in 14nm SOI FinFET technology, using a matchline current sensing scheme with an energy consumption of 0.63 fJ/bit/search at 0.9V and a peak current reduction of 50% compared to voltage sensing implementations. A by entry adjustable search depth allows to reduce power consumption for variable size translation tables. The implemented sandwich floorplan enables an area efficient integration of high performance 0.286μm2 16T-TCAM and 0.143μm2 8T-SRAM cells.