{"title":"Design and analysis of resonant drive circuit for electrostatic actuators","authors":"Sangtak Park, Yanhui Bai, J. Yeow","doi":"10.1109/ISOT.2010.5687329","DOIUrl":null,"url":null,"abstract":"Most electrostatic actuators fabricated by MEMS technologies require high actuation voltage and suffer from the pull-in phenomenon in the presence of high parasitic capacitance, either driven by conventional voltage control or charge control. The resonant drive circuit presented in this paper uses much lo wer supply voltage to drive electrostatic actuators, which usually require a high actuation voltage from a high voltage am plifier, through passive amplification at its electrical resonance. Furthermore, it is shown that the resonant drive circuit is able to extend operation range of electrostatic actuators beyond the pull-in point even in the presence of high parasitic capacitance due to its inherent negative feedback. Analytical and numerical models of the resonant drive circuit are derived and built to demonstrate the advantages of the resonant drive circuit implemented with two logic gates arranged in the BTL configuration.","PeriodicalId":91154,"journal":{"name":"Optomechatronic Technologies (ISOT), 2010 International Symposium on : 25-27 Oct. 2010 : [Toronto, ON]. International Symposium on Optomechatronic Technologies (2010 : Toronto, Ont.)","volume":"17 1","pages":"1-6"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optomechatronic Technologies (ISOT), 2010 International Symposium on : 25-27 Oct. 2010 : [Toronto, ON]. International Symposium on Optomechatronic Technologies (2010 : Toronto, Ont.)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISOT.2010.5687329","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
Most electrostatic actuators fabricated by MEMS technologies require high actuation voltage and suffer from the pull-in phenomenon in the presence of high parasitic capacitance, either driven by conventional voltage control or charge control. The resonant drive circuit presented in this paper uses much lo wer supply voltage to drive electrostatic actuators, which usually require a high actuation voltage from a high voltage am plifier, through passive amplification at its electrical resonance. Furthermore, it is shown that the resonant drive circuit is able to extend operation range of electrostatic actuators beyond the pull-in point even in the presence of high parasitic capacitance due to its inherent negative feedback. Analytical and numerical models of the resonant drive circuit are derived and built to demonstrate the advantages of the resonant drive circuit implemented with two logic gates arranged in the BTL configuration.