Magnetooptical studies of resonant plasma excitations in grating-gate GaN/AlGaN-based field-effect transistors

2011 International Conference on Infrared, Millimeter, and Terahertz Waves Pub Date : 2011-12-15 DOI:10.1109/IRMMW-THZ.2011.6105195

K. Nogajewski, K. Karpierz, M. Grynberg, W. Knap, R. Gaska, J. Yang, M. Shur, J. Lusakowski

引用次数: 0

Abstract

We report on experimental observation and theoretical analysis of magnetic-field and gate-voltage tunable magnetoplasmon resonances in grating-gate GaN/AlGaN-based field-effect transistors suitable for detection of THz radiation.

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光栅栅GaN/ algan基场效应晶体管中共振等离子体激励的磁光研究

本文报道了适用于探测太赫兹辐射的栅极GaN/ algan基场效应晶体管中磁场和门电压可调磁等离子体共振的实验观察和理论分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2011 International Conference on Infrared, Millimeter, and Terahertz Waves

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