Byungchoul Park, Injun Park, Woojun Choi, Youngcheol Chae
{"title":"A 64×64 APD-Based ToF Image Sensor with Background Light Suppression up to 200 klx Using In-Pixel Auto-Zeroing and Chopping","authors":"Byungchoul Park, Injun Park, Woojun Choi, Youngcheol Chae","doi":"10.23919/VLSIC.2019.8778015","DOIUrl":null,"url":null,"abstract":"This paper presents a time-of-flight (ToF) image sensor for outdoor applications. The sensor employs a gain-modulated avalanche photodiode (APD) that achieves high modulation frequency. The suppression capability of background light is greatly improved up to 200klx by using a combination of in pixel auto-zeroing and chopping. $\\mathrm{A}64 \\times 64$ APD-based ToF sensor is fabricated in $\\mathrm{a}0.11 \\mu \\mathrm{m}$ CMOS. It achieves depth ranges from 0.5 to 2 m with 25MHz modulation and from 2 to 20 m with 1.56MHz modulation. For both ranges, it achieves a non-linearity below 0.8% and a precision below 3.4% at a 3D frame rate of 96fps.","PeriodicalId":6707,"journal":{"name":"2019 Symposium on VLSI Circuits","volume":"24 1","pages":"C256-C257"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIC.2019.8778015","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
This paper presents a time-of-flight (ToF) image sensor for outdoor applications. The sensor employs a gain-modulated avalanche photodiode (APD) that achieves high modulation frequency. The suppression capability of background light is greatly improved up to 200klx by using a combination of in pixel auto-zeroing and chopping. $\mathrm{A}64 \times 64$ APD-based ToF sensor is fabricated in $\mathrm{a}0.11 \mu \mathrm{m}$ CMOS. It achieves depth ranges from 0.5 to 2 m with 25MHz modulation and from 2 to 20 m with 1.56MHz modulation. For both ranges, it achieves a non-linearity below 0.8% and a precision below 3.4% at a 3D frame rate of 96fps.