A V-band waveguide to microstrip inline transition

Kyu Y. Han, C. Pao
{"title":"A V-band waveguide to microstrip inline transition","authors":"Kyu Y. Han, C. Pao","doi":"10.1109/MWSYM.2012.6259752","DOIUrl":null,"url":null,"abstract":"A wideband, low loss inline transition from microstrip line to rectangular waveguide is presented. This transition efficiently couples energy from a microstrip line to a ridge and subsequently to a TE10 waveguide. This unique structure requires no mechanical pressure for electrical contact between the microstrip probe and the ridge because the main planar circuitry and ridge sections are placed on a single housing. The measured insertion loss for back-to-back transition is 0.5 – 0.7 dB (0.25 – 0.35 dB/transition) in the band 50 – 72 GHz.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE/MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2012.6259752","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13

Abstract

A wideband, low loss inline transition from microstrip line to rectangular waveguide is presented. This transition efficiently couples energy from a microstrip line to a ridge and subsequently to a TE10 waveguide. This unique structure requires no mechanical pressure for electrical contact between the microstrip probe and the ridge because the main planar circuitry and ridge sections are placed on a single housing. The measured insertion loss for back-to-back transition is 0.5 – 0.7 dB (0.25 – 0.35 dB/transition) in the band 50 – 72 GHz.
一个v波段波导到微带内嵌过渡
提出了一种从微带线到矩形波导的宽带低损耗线内过渡。这种转换有效地将能量从微带线耦合到脊线,然后耦合到TE10波导。这种独特的结构在微带探针和脊线之间的电接触不需要机械压力,因为主要的平面电路和脊线部分被放置在一个外壳上。在50 - 72 GHz频段,背靠背转换的插入损耗为0.5 - 0.7 dB (0.25 - 0.35 dB/转换)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信