Jasminka Popović, E. Tkalčec, B. Gržeta, C. Goebbert, V. Ksenofontov, M. Takeda
{"title":"Defect structure examination of Sn-doped indium oxide (ITO)","authors":"Jasminka Popović, E. Tkalčec, B. Gržeta, C. Goebbert, V. Ksenofontov, M. Takeda","doi":"10.1524/ZKRI.2007.2007.SUPPL_26.489","DOIUrl":null,"url":null,"abstract":"Tin-doped indium oxide (ITO) samples with doping level up to 12.3 at% Sn were prepared by a sol-gel technique and characterised by X-ray powder diffraction as well with ^(119)Sn-Mossbauer spectroscopy. Diffraction patterns indicated that all samples were cubic, space group Ia-3, and isostructural with In_2O_3. Diffraction lines were broadened, the line broadening increased with tin content. The unit-cell parameter increased with tin doping level up to 7.8 at% Sn and decreased at higher levels. This behaviour of the unit-cell parameter indicated that the tin substitution for indium on B and D sites of the original In_2O_3 structure is non-uniform and depends on tin content. Rietveld structure refinement showed the presence of interstitial oxygen in the Sn-doped samples. The position of interstitial oxygen indicated the D site preference for tin at low tin doping level, and subsequent increase in the B site occupancy with the increase in tin content. ^(119)Sn-Mossbauer spectroscopy revealed that incorporated tin resided equally sites B and D for 7.8 at% Sn. Below that doping level the preference for tin to occupy D site was noticed, while for doping level higher than 7.8 at% Sn the B site was preferred.","PeriodicalId":23897,"journal":{"name":"Zeitschrift Fur Kristallographie","volume":"68 1","pages":"489-494"},"PeriodicalIF":0.0000,"publicationDate":"2007-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Zeitschrift Fur Kristallographie","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1524/ZKRI.2007.2007.SUPPL_26.489","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"Chemistry","Score":null,"Total":0}
引用次数: 4
Abstract
Tin-doped indium oxide (ITO) samples with doping level up to 12.3 at% Sn were prepared by a sol-gel technique and characterised by X-ray powder diffraction as well with ^(119)Sn-Mossbauer spectroscopy. Diffraction patterns indicated that all samples were cubic, space group Ia-3, and isostructural with In_2O_3. Diffraction lines were broadened, the line broadening increased with tin content. The unit-cell parameter increased with tin doping level up to 7.8 at% Sn and decreased at higher levels. This behaviour of the unit-cell parameter indicated that the tin substitution for indium on B and D sites of the original In_2O_3 structure is non-uniform and depends on tin content. Rietveld structure refinement showed the presence of interstitial oxygen in the Sn-doped samples. The position of interstitial oxygen indicated the D site preference for tin at low tin doping level, and subsequent increase in the B site occupancy with the increase in tin content. ^(119)Sn-Mossbauer spectroscopy revealed that incorporated tin resided equally sites B and D for 7.8 at% Sn. Below that doping level the preference for tin to occupy D site was noticed, while for doping level higher than 7.8 at% Sn the B site was preferred.
期刊介绍:
Zeitschrift für Kristallographie International journal for structural, physical, and chemical aspects of crystalline materials ISSN 0044-2968 Founded in 1877 by Paul Groth Zeitschrift für Kristallographie is one of the world’s oldest scientific journals. In original papers, letters and review articles it presents results of theoretical or experimental study on crystallography.