Investigating scattering effects in nano-scale double gate MOSFETs by using direct solution of the Boltzmann transport equation and Poisson-Schrodinger equation method

Abstract

The lattice scattering is carefully involved in a direct solution of the BTE and Poisson-Schrodinger equation method. Simulating results of a 9nm DG MOSFET shows the lattice scattering effects on the barrier height and the positions of barrier peak are small, but the effects on the carrier drift velocity are strongly. Not only intra-valley scatterings but also the inter-valley scatterings affect the electron energy, drift velocity and density distribution in channel region strongly. Thus the scattering effect must be considered when discussion carrier energy related device characteristics such as reliability, heat generation.