Fabrication of site specific amorphous/nanocrystalline silicon composite thin film for solar cells

B. Newton, Abu H. Safe, M. Benemara, S. Yu, H. Naseem
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引用次数: 1

Abstract

The absorption properties of amorphous silicon (α-Si) and the electron transport properties of nanocrystalline silicon are combined in a novel composite material for thin film silicon solar cells. In this work a composite film composed of α-Si with site specific areas of nanocrystalline material was created. Al was deposited through a SiO2 template containing nanometer sized apertures with an approximate diameter of 250 nm onto an α-Si film supported by a <;100>; crystalline silicon substrate. It was then annealed at 350°C. The annealing caused crystallization only at sites where the Al was in contact with the α-Si surface. The AIC created site specific three dimensional nanocrystalline structures embedded in a thin film of α-Si. After grain boundary passivation these nanocrystalline sites will provide pathways for charge carriers that are less defect dense than the α-Si film. TEM samples were fabricated from the composite film utilizing the focus ion beam. The growth characteristics of these 3D nanostructures and the α-Si thin film were characterized utilizing ESEM and the TEM.
太阳能电池专用非晶/纳米晶硅复合薄膜的制备
将非晶硅(α-Si)的吸收特性和纳米晶硅的电子输运特性结合在一起,制备了一种新型薄膜硅太阳电池复合材料。本文制备了一种由α-Si和纳米晶材料的特定区域组成的复合薄膜。Al通过含有纳米孔径(直径约250 nm)的SiO2模板沉积在α-Si薄膜上;晶体硅衬底。然后在350℃下退火。退火只在Al与α-Si表面接触的部位产生结晶。AIC在α-Si薄膜中嵌入了特定位点的三维纳米晶体结构。晶界钝化后,这些纳米晶位将为缺陷密度小于α-Si薄膜的载流子提供通道。利用聚焦离子束制备了TEM样品。利用ESEM和TEM对三维纳米结构和α-Si薄膜的生长特性进行了表征。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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