B. Newton, Abu H. Safe, M. Benemara, S. Yu, H. Naseem
{"title":"Fabrication of site specific amorphous/nanocrystalline silicon composite thin film for solar cells","authors":"B. Newton, Abu H. Safe, M. Benemara, S. Yu, H. Naseem","doi":"10.1109/PVSC.2012.6317822","DOIUrl":null,"url":null,"abstract":"The absorption properties of amorphous silicon (α-Si) and the electron transport properties of nanocrystalline silicon are combined in a novel composite material for thin film silicon solar cells. In this work a composite film composed of α-Si with site specific areas of nanocrystalline material was created. Al was deposited through a SiO2 template containing nanometer sized apertures with an approximate diameter of 250 nm onto an α-Si film supported by a <;100>; crystalline silicon substrate. It was then annealed at 350°C. The annealing caused crystallization only at sites where the Al was in contact with the α-Si surface. The AIC created site specific three dimensional nanocrystalline structures embedded in a thin film of α-Si. After grain boundary passivation these nanocrystalline sites will provide pathways for charge carriers that are less defect dense than the α-Si film. TEM samples were fabricated from the composite film utilizing the focus ion beam. The growth characteristics of these 3D nanostructures and the α-Si thin film were characterized utilizing ESEM and the TEM.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"89 1","pages":"001220-001224"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 38th IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2012.6317822","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The absorption properties of amorphous silicon (α-Si) and the electron transport properties of nanocrystalline silicon are combined in a novel composite material for thin film silicon solar cells. In this work a composite film composed of α-Si with site specific areas of nanocrystalline material was created. Al was deposited through a SiO2 template containing nanometer sized apertures with an approximate diameter of 250 nm onto an α-Si film supported by a <;100>; crystalline silicon substrate. It was then annealed at 350°C. The annealing caused crystallization only at sites where the Al was in contact with the α-Si surface. The AIC created site specific three dimensional nanocrystalline structures embedded in a thin film of α-Si. After grain boundary passivation these nanocrystalline sites will provide pathways for charge carriers that are less defect dense than the α-Si film. TEM samples were fabricated from the composite film utilizing the focus ion beam. The growth characteristics of these 3D nanostructures and the α-Si thin film were characterized utilizing ESEM and the TEM.