Design of 900 GHz Microstrip-Waveguide Probe

Abstract

To meet the need for highly integrated coupling technology for terahertz system-in-package, the design of a 900 GHz microstrip-waveguide probe based on GaAs is presented in this paper. The probe with fine airtightness is composed of two $25 \mu \mathrm{m}$ GaAs substrates with metallization vias. The total thickness of the probe is less than $60 \mu \mathrm{m}$, which makes it suitable to be applied in micro-assembly integration and system-in-package application. Working around 900 GHz, the simulation results respectively show that insert loss of the probe is 0.73 dB and return loss is 20.5 dB.