Y. Yokoyama, Nybutaka Itoh, Masap Katayama, K. Takashima, Hiroshi Akasaki, Masayuki Kaneda, Toshitsugu Ueda, Yousuke Tanaka, E. Yamasaki, Masaya Todokoro, Keinosuke Toriyama, H. Miki, M. Yagyu, T. Kobayashi, S. Miyaoka, N. Tamba
{"title":"A 1.8-V embedded 18-Mb DRAM macro with a 9-ns RAS access time and memory cell efficiency of 33%","authors":"Y. Yokoyama, Nybutaka Itoh, Masap Katayama, K. Takashima, Hiroshi Akasaki, Masayuki Kaneda, Toshitsugu Ueda, Yousuke Tanaka, E. Yamasaki, Masaya Todokoro, Keinosuke Toriyama, H. Miki, M. Yagyu, T. Kobayashi, S. Miyaoka, N. Tamba","doi":"10.1109/CICC.2000.852666","DOIUrl":null,"url":null,"abstract":"A 1.8-V embedded 18-Mb DRAM with memory-cell efficiency of 33% that is achieved by a single-side interface architecture has been developed. A 9-ns RAS access time and a 4.6-ns CAS access time that enables a data-translation rate of 40 Gb/s was achieved. To achieve fast access time, it uses a multi-word redundancy scheme and a YS merged sense scheme. Noise restraint capacitors are introduced to reduce the induced noise to as low as 100 mV for simultaneous wide bandwidth operation with VDD of 1.8 V.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2000.852666","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A 1.8-V embedded 18-Mb DRAM with memory-cell efficiency of 33% that is achieved by a single-side interface architecture has been developed. A 9-ns RAS access time and a 4.6-ns CAS access time that enables a data-translation rate of 40 Gb/s was achieved. To achieve fast access time, it uses a multi-word redundancy scheme and a YS merged sense scheme. Noise restraint capacitors are introduced to reduce the induced noise to as low as 100 mV for simultaneous wide bandwidth operation with VDD of 1.8 V.