Millimeter-wave-triggering of insulator-to-metal transition in Vanadium dioxide

F. Qaderi, A. Muller, A. Krammer, Miroslav J. Veljovic, Z. Ollmann, M. Hayati, A. Skrivervik, A. Schueler, T. Feurer, A. Ionescu
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引用次数: 1

Abstract

We establish insulator-to-metal transition (IMT) in Vanadium dioxide (VO2) by millimeter-wave (mm-wave) actuation, using two coupled dipole antennas: a simple one as a continuous mm-wave-source and the other one with an embedded VO2 part as an absorber. We measured |S12| by a vector network analyzer (VNA), to show how the induced mm-wave power in insulating biased VO2 causes IMT. The bias voltage is set to enhance the sensitivity in VO2. The VO2 embedded antenna shows sensitivity to the mm-wave power down to 3.2 pW. The experiment proves the detection concept also for terahertz frequencies.
毫米波触发的二氧化钒绝缘体到金属转变
我们利用两个偶极子耦合天线,利用毫米波(mm-wave)驱动,在二氧化钒(VO2)中建立了绝缘体到金属的过渡(IMT):一个简单的天线作为连续毫米波源,另一个嵌入VO2部分作为吸收器。我们通过矢量网络分析仪(VNA)测量了S12,以显示绝缘偏置VO2中诱导毫米波功率如何引起IMT。偏置电压的设置是为了提高VO2的灵敏度。VO2嵌入式天线对毫米波功率的灵敏度低至3.2 pW。实验也验证了对太赫兹频率的探测概念。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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