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Analysis of 3D NAND technologies and comparison between charge-trap-based and floating-gate-based flash devices

Q4 Computer Science
Journal of China Universities of Posts and Telecommunications Pub Date : 2017-06-01 DOI:10.1016/S1005-8885(17)60214-0
L. Shijun, Zou Xuecheng
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引用次数: 5
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三维NAND技术分析及基于电荷阱和基于浮栅的闪存器件的比较
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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来源期刊
Journal of China Universities of Posts and Telecommunications
Journal of China Universities of Posts and Telecommunications Computer Science-Information Systems
CiteScore
0.50
自引率
0.00%
发文量
1878
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