{"title":"A novel technique for active device modeling for microwave mixer applications","authors":"A. Dao, G. Branner","doi":"10.1109/MWSCAS.1991.252188","DOIUrl":null,"url":null,"abstract":"Active microwave subsystems such as mixers and other frequency translation devices find increasing application with the advent of MIMIC (monolithic microwave integrated circuit) technology. The authors consider the use of a silicon bipolar MMIC device for such an application. A systematic technique to develop a precision general model for application to such subsystem design is described. The modeling technique described provides an optimum computer model which accurately predicts both linear and nonlinear device behavior with excellent fidelity upon comparison with measured data.<<ETX>>","PeriodicalId":6453,"journal":{"name":"[1991] Proceedings of the 34th Midwest Symposium on Circuits and Systems","volume":"119 1","pages":"429-431 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1991-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] Proceedings of the 34th Midwest Symposium on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.1991.252188","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Active microwave subsystems such as mixers and other frequency translation devices find increasing application with the advent of MIMIC (monolithic microwave integrated circuit) technology. The authors consider the use of a silicon bipolar MMIC device for such an application. A systematic technique to develop a precision general model for application to such subsystem design is described. The modeling technique described provides an optimum computer model which accurately predicts both linear and nonlinear device behavior with excellent fidelity upon comparison with measured data.<>