M. Cai, Hyunwoo Park, Jackie Yang, Youseok Suh, Jun Chen, Yandong Gao, Lunwei Chang, John Zhu, S. C. Song, Jihong Choi, Gary Chen, Bo Yu, Xiao-Yong Wang, V. Huang, Gudoor Reddy, Nagaraj Kelageri, D. Kidd, P. Pénzes, W. Chung, S. Yang, S.B. Lee, B. Tien, G. Nallapati, S. Wu, P. Chidambaram
{"title":"7nm Mobile SoC and 5G Platform Technology and Design Co-Development for PPA and Manufacturability","authors":"M. Cai, Hyunwoo Park, Jackie Yang, Youseok Suh, Jun Chen, Yandong Gao, Lunwei Chang, John Zhu, S. C. Song, Jihong Choi, Gary Chen, Bo Yu, Xiao-Yong Wang, V. Huang, Gudoor Reddy, Nagaraj Kelageri, D. Kidd, P. Pénzes, W. Chung, S. Yang, S.B. Lee, B. Tien, G. Nallapati, S. Wu, P. Chidambaram","doi":"10.23919/VLSIT.2019.8776511","DOIUrl":null,"url":null,"abstract":"We report on Qualcomm® Snapdragon™ SDM855 mobile SoC and world's first commercial 5G platform using industry-leading 7nm FINFET technologies. SDM855 exhibits $> 30\\%$ CPU performance gain over the previous generation thanks to a new design architecture enabled by dual poly pitch process integration. Low voltage operation and tight spread in power consumption has been achieved through process and design co-development, delivering a high performance and low power solution for both mobile and AI applications. Extending the 7nm technology with 2nd-year process enhancement demonstrates up to 50mV CPU Vmin reduction without any change to design rules, which paves the road for an integrated 5G mobile platform with $> 10\\text{Gbps}$ connectivity.","PeriodicalId":6752,"journal":{"name":"2019 Symposium on VLSI Technology","volume":"40 1","pages":"T104-T105"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIT.2019.8776511","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We report on Qualcomm® Snapdragon™ SDM855 mobile SoC and world's first commercial 5G platform using industry-leading 7nm FINFET technologies. SDM855 exhibits $> 30\%$ CPU performance gain over the previous generation thanks to a new design architecture enabled by dual poly pitch process integration. Low voltage operation and tight spread in power consumption has been achieved through process and design co-development, delivering a high performance and low power solution for both mobile and AI applications. Extending the 7nm technology with 2nd-year process enhancement demonstrates up to 50mV CPU Vmin reduction without any change to design rules, which paves the road for an integrated 5G mobile platform with $> 10\text{Gbps}$ connectivity.
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