T. Tikka, K. Stadius, J. Ryynanen, M. Kaltiokallio
{"title":"European Solid-State Circuits Conference","authors":"T. Tikka, K. Stadius, J. Ryynanen, M. Kaltiokallio","doi":"10.1109/ESSCIRC.2015.7313885","DOIUrl":null,"url":null,"abstract":"This paper describes a wide-band receiver designed to be connected directly to a single-ended non-50 ohm antenna. The receiver is based on a four-phase mixer-first architecture and it includes an on-chip transformer balun. Reconfigurability in the balun extends the low-end operation band by 300 MHz. This design demonstrates that with an on-chip balun it is possible to achieve comparable performance to a similar receiver with an external high-performance balun. The receiver is implemented in 65-nm CMOS and it operates in 0.8-3 GHz band with 40 dB gain and 7 dB noise figure.","PeriodicalId":11845,"journal":{"name":"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2015-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2015.7313885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This paper describes a wide-band receiver designed to be connected directly to a single-ended non-50 ohm antenna. The receiver is based on a four-phase mixer-first architecture and it includes an on-chip transformer balun. Reconfigurability in the balun extends the low-end operation band by 300 MHz. This design demonstrates that with an on-chip balun it is possible to achieve comparable performance to a similar receiver with an external high-performance balun. The receiver is implemented in 65-nm CMOS and it operates in 0.8-3 GHz band with 40 dB gain and 7 dB noise figure.