Spectral nature of luminosity associated with the surface flashover process

T. Asokan, T. Sudarshan
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引用次数: 14

Abstract

The luminous events associated with the breakdown along the surfaces of large band gap insulators such as polycrystalline alumina and monocrystalline quartz in vacuum were investigated using a phototube and a very sensitive photomultiplier tube (PMT). The spectral nature of the light emitted during breakdown was resolved (in terms of the wavelength) by interfacing a monochromator with the PMT. In the case of the monocrystalline quartz specimen, the breakdown luminosity was observed to be associated with defects located at 2.76 and 1.91 eV below the conduction band edge. The breakdown luminosity of polycrystalline alumina was found to be associated with the defects corresponding to energy levels at approximately 1.91, 2.25, 2.45 and 2.76 eV. The formation of these defects is discussed in terms of the nonstoichiometric nature of the lattice structure at the surface. The samples were found to emit light when no breakdown occurs. This emission is attributed to the deep level defects. The observed results suggest that the surface flashover process is primarily controlled by the defect or trapping centers located within the forbidden gap of the insulators. >
与表面闪络过程相关的光度的光谱性质
利用光电管和非常灵敏的光电倍增管(PMT)研究了真空中多晶氧化铝和单晶石英等大带隙绝缘体表面击穿相关的发光事件。在击穿期间发射的光的光谱性质是通过与PMT连接单色仪来解决的(就波长而言)。在单晶石英样品中,观察到击穿光度与位于导带边缘以下2.76和1.91 eV的缺陷有关。发现多晶氧化铝的击穿光度与约1.91、2.25、2.45和2.76 eV能级对应的缺陷有关。根据表面晶格结构的非化学计量性质,讨论了这些缺陷的形成。发现样品在没有发生击穿的情况下会发光。这种发射是由于深层缺陷造成的。结果表明,表面闪络过程主要由绝缘子禁隙内的缺陷或俘获中心控制。>
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