STACKING FAULTS IN THE SINGLE CRYSTALS

Abstract

0 ≤ ≤ x have been grown by a direct vapour transport techn ique (DVT) in the laboratory. The structural characterizations of these crystals are made by XRD method. The particle size for a nu mber of reflections has been calculated using the Scherrer’s formula. A con siderable variation is shown in the deformation ( α ) and growth ( β ) fault probabilities in In xMoSe 2 ( ) 1 0 ≤ ≤ x single crystal due to off-stoichiometry, which pos sesses the stacking fault in the single crystal.