n-CdTe polycrystalline photoelectrode prepared by direct reaction of tellurium and Cd-substrate

Abstract

In the present work we have produced polycrystalline n-CdTe film on Cd element as substrate by direct surface reaction between elemental Te and Cd surfaces, at elevated temperatures ranging between 180 and 275°C under argon atmosphere. The film is characterized by X-ray diffraction and reflectance spectroscopy. The i-V characteristics and photoelectrochemical behaviour of CdTe in polysulphide electrolyte are investigated. The effect of light intensity on both short circuit current (i_sc) and open circuit voltage (V_oc) of the cell: Cd/CdTe/polysulphide/Pt is also recorded.