Features of the defect structure and photoluminescence of nominally pure LiNbO3 crystals grown from boron doped charge

N. V. Sidorov, A. Kadetova, M. Smirnov, R. Titov, N. Teplyakova, M. Palatnikov
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Abstract

Features of the defect structure of nominally pure LiNbO3:В crystals were investigated by X-ray diffraction analysis and photoluminescence. Crystals were grown by the Czochralski from a mixture of congruent composition charge containing 0.08 and 0.12 wt. % boron. At this, the concentration of boron in crystals is at the level of trace amounts of metallic impurities and is ~ 10–4 wt%. MeO6 oxygen-octahedral clusters are responsible for the ferroelectric and nonlinear optical properties of the crystal. It has been found that in LiNbO3:B crystals, the lengths of O–O, Me–O, and Me–Me (Me–Li, Nb) bonds in clusters, the arrangement of Me cations, vacancies, and NbLi point defects along the polar axis differ significantly from those for nominally pure congruent crystal. NbLi defects and transition metals are deep electron traps responsible for the photorefraction effect. The photoluminescence spectra showed that the concentration of defects and metals in the investigated LiNbO3:B crystals is lower than in the congruent crystal. these differences can be due to both a change in the properties of the boron-containing melt and the localization of trace amounts of boron in the O4 tetrahedral gaps of the LiNbO3 crystal structure. In the first case, reactive boron binds cations of niobium and transition metals in the melt into stable complexes.
掺杂硼的名义纯LiNbO3晶体的缺陷结构和光致发光特性
通过x射线衍射分析和光致发光研究了名义纯LiNbO3:В晶体的缺陷结构特征。晶体是由含有0.08 wt. %和0.12 wt. %硼的相同组成电荷的混合物通过zzochralski生长的。此时,晶体中硼的浓度达到微量金属杂质的水平,为~ 10-4 wt%。MeO6氧八面体团簇对晶体的铁电性质和非线性光学性质负责。研究发现,在LiNbO3:B晶体中,簇中O-O、Me - o和Me - Me (Me - li, Nb)键的长度、Me阳离子的排列、空位和沿极轴的NbLi点缺陷与名义上纯全等晶体有很大的不同。NbLi缺陷和过渡金属是引起光折射效应的深层电子陷阱。光致发光光谱表明,在所研究的LiNbO3:B晶体中缺陷和金属的浓度低于同晶。这些差异可能是由于含硼熔体性质的变化和微量硼在LiNbO3晶体结构的O4四面体间隙中的局部化造成的。在第一种情况下,反应性硼将熔体中的铌和过渡金属阳离子结合成稳定的配合物。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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