Dislocation Etching Morphology on the A Plane of Sapphire Crystal

IF 1.5 4区 材料科学 Q3 CRYSTALLOGRAPHY
F. Cao, Fei Li, Zhiyong Yuan, Lunyong Zhang, Sida Jiang, Hongxian Shen, Z. Ning, Yongjiang Huang, D. Xing, H. Zuo, Jiecai Han, Jianfei Sun
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引用次数: 2

Abstract

In this work, the dislocation etching pit morphology and etching kinetics on the A‐{11 2¯ 0} plane of sapphire crystal (α‐Al2O3) are studied experimentally. The results show that the etch pit exhibits a subrhombic 3D morphology, which is consistent with the atom arrangement symmetry of the A plane. Further analysis shows that the two adjacent sides of the rhombic etch pits correspond to the directions [3 3¯ 0 1¯ ] and [3 3¯ 02], respectively; both of them are in the atomic close‐packing direction of A plane. The etch pits are controlled by a chemical reaction between Al2O3 and potassium hydroxide (KOH) with the reaction activation energy of 51.7 kJ mol−1, which is developed in a manner of kinematic wave by the step moving with a constant speed.
蓝宝石晶体A面位错蚀刻形貌研究
本文研究了蓝宝石晶体(α‐Al2O3)在A‐{11.2¯0}平面上的位错蚀刻坑形态和蚀刻动力学。结果表明,蚀坑呈现出亚菱形的三维形貌,符合a面原子排列的对称性。进一步分析表明,菱形蚀刻坑的两个相邻边分别对应于[3 3¯0 ~ 1¯]和[3 3¯02]方向;它们都在A平面的原子密排方向。蚀坑是由Al2O3与氢氧化钾(KOH)的化学反应控制的,反应活化能为51.7 kJ mol−1,反应活化能以等速阶跃运动的运动波形式发展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
自引率
6.70%
发文量
121
审稿时长
1.9 months
期刊介绍: The journal Crystal Research and Technology is a pure online Journal (since 2012). Crystal Research and Technology is an international journal examining all aspects of research within experimental, industrial, and theoretical crystallography. The journal covers the relevant aspects of -crystal growth techniques and phenomena (including bulk growth, thin films) -modern crystalline materials (e.g. smart materials, nanocrystals, quasicrystals, liquid crystals) -industrial crystallisation -application of crystals in materials science, electronics, data storage, and optics -experimental, simulation and theoretical studies of the structural properties of crystals -crystallographic computing
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