High speed waveguide-integrated Ge/Si avalanche photodetector

N. Duan, T. Liow, A. Lim, L. Ding, G. Lo
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引用次数: 14

Abstract

We report waveguide Ge/Si avalanche photodiodes with a high 3-dB bandwidth of ~20 GHz and a high responsivity of 22 A/W. Such device can be monolithically integrated with other silicon photonic components on SOI substrates.
高速波导集成Ge/Si雪崩光电探测器
我们报道了具有~20 GHz高3db带宽和22 a /W高响应率的波导Ge/Si雪崩光电二极管。该器件可与SOI衬底上的其他硅光子元件单片集成。
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