{"title":"High speed waveguide-integrated Ge/Si avalanche photodetector","authors":"N. Duan, T. Liow, A. Lim, L. Ding, G. Lo","doi":"10.1364/OFC.2013.OM3K.3","DOIUrl":null,"url":null,"abstract":"We report waveguide Ge/Si avalanche photodiodes with a high 3-dB bandwidth of ~20 GHz and a high responsivity of 22 A/W. Such device can be monolithically integrated with other silicon photonic components on SOI substrates.","PeriodicalId":6456,"journal":{"name":"2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/OFC.2013.OM3K.3","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
We report waveguide Ge/Si avalanche photodiodes with a high 3-dB bandwidth of ~20 GHz and a high responsivity of 22 A/W. Such device can be monolithically integrated with other silicon photonic components on SOI substrates.