Electron transport in co-evaporated thin film and melt-spun ribbon Al1−xMnx alloys

V. Nguyen Van, S. Fisson, K. Yu-Zhang, M. Harmelin
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引用次数: 1

Abstract

Accurate measurements of the d.c. electrical resistivity (between 30 and 300 K) and of the thermoelectric power (between 80 and 300 K) were performed on two types of well-characterized Al1−xMnx alloy samples: amorphous thin films (with 10 at.% ⩽ x ⩽ 14 at.%) deposited by co-evaporation on cold substrates, and Al89Mn11 melt-spun ribbon in quasi-crystalline (asprepared) and crystalline (annealed) states. The results are compared and emphasize the sensitivity of the transport properties to structural changes.

共蒸发薄膜和熔纺带状Al1−xMnx合金中的电子输运
在两种表征良好的Al1−xMnx合金样品上进行了直流电阻率(30 ~ 300 K)和热电功率(80 ~ 300 K)的精确测量:非晶薄膜(10 at。% < x≤14 at.%)通过共蒸发沉积在冷衬底上,Al89Mn11熔融纺丝带处于准晶(制备)和晶(退火)状态。结果进行了比较,强调了输运性质对结构变化的敏感性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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