Ion-beam etching of substrate steps: SNS compared to step-edge grain boundary Josephson-junctions

C. Francke, A. Krämer, M. Offner, R. Strade, L. Mex, J. Müller
{"title":"Ion-beam etching of substrate steps: SNS compared to step-edge grain boundary Josephson-junctions","authors":"C. Francke,&nbsp;A. Krämer,&nbsp;M. Offner,&nbsp;R. Strade,&nbsp;L. Mex,&nbsp;J. Müller","doi":"10.1016/S0964-1807(99)00036-8","DOIUrl":null,"url":null,"abstract":"<div><p>For “SNS step and gap”, and for “step-edge grain boundary”, Josephson-junctions steep steps in the substrate are needed to get either a break in the YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub>-film (SNS) or to induce grain boundaries in the growth of the YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub>-film across the step (step-edge).</p><p>We report on the influence of the profiles of ion-beam etched substrate steps in MgO and SrTiO<sub>3</sub> on the growth of YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub>-films at the step-edges and on the electrical properties of the different Josephson-junction types. On MgO we have fabricated Josephson-junctions of the SNS-type (using Ag as “N”), while for the step-edge junctions SrTiO<sub>3</sub> was used. Both types of junctions exhibit Josephson-effects at 77<!--> <!-->K. For the steps we use photoresist AZ 5214 E with steep edges as the mask. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) analysis on differently fabricated steps are presented and compared to the electrical properties of patterned YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub>-films grown on them. Especially the role of material redeposited at the edge of a step during ion-beam etching is discussed. The reproducible step edge profiles are reflected in reproducible electrical properties of the Josephson-junctions and dc-SQUIDs (on chip and chip to chip).</p></div>","PeriodicalId":100110,"journal":{"name":"Applied Superconductivity","volume":"6 10","pages":"Pages 735-739"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0964-1807(99)00036-8","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Superconductivity","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0964180799000368","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

For “SNS step and gap”, and for “step-edge grain boundary”, Josephson-junctions steep steps in the substrate are needed to get either a break in the YBa2Cu3O7-film (SNS) or to induce grain boundaries in the growth of the YBa2Cu3O7-film across the step (step-edge).

We report on the influence of the profiles of ion-beam etched substrate steps in MgO and SrTiO3 on the growth of YBa2Cu3O7-films at the step-edges and on the electrical properties of the different Josephson-junction types. On MgO we have fabricated Josephson-junctions of the SNS-type (using Ag as “N”), while for the step-edge junctions SrTiO3 was used. Both types of junctions exhibit Josephson-effects at 77 K. For the steps we use photoresist AZ 5214 E with steep edges as the mask. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) analysis on differently fabricated steps are presented and compared to the electrical properties of patterned YBa2Cu3O7-films grown on them. Especially the role of material redeposited at the edge of a step during ion-beam etching is discussed. The reproducible step edge profiles are reflected in reproducible electrical properties of the Josephson-junctions and dc-SQUIDs (on chip and chip to chip).

基板台阶的离子束刻蚀:与台阶边缘晶界josephson结的比较
对于“SNS台阶和间隙”,以及“台阶边缘晶界”,需要在衬底上的约瑟夫森结陡峭的台阶来获得yba2cu3o7膜(SNS)的断裂,或者在yba2cu3o7膜的生长过程中诱导晶界穿过台阶(台阶边缘)。我们报道了MgO和SrTiO3中离子束刻蚀衬底台阶的轮廓对台阶边缘yba2cu3o7薄膜生长和不同josephson结类型电学性能的影响。我们在MgO上制备了sns型josephson结(用Ag作为“N”),而台阶边结则使用SrTiO3。两种结在77k时均表现出约瑟夫森效应。对于这些步骤,我们使用具有陡峭边缘的光刻胶AZ 5214 E作为掩膜。采用原子力显微镜(AFM)和透射电镜(TEM)对不同制备步骤进行了分析,并对在其上生长的yba2cu3o7薄膜的电性能进行了比较。特别讨论了在离子束蚀刻过程中,在台阶边缘再沉积材料的作用。可复制的阶跃边缘轮廓反映在约瑟夫森结和直流squid(片上和片对片)的可复制电学特性上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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