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The study of the influence of the layer resistivity of thin epitaxial Si cells

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Pub Date : 1994-12-05 DOI:10.1109/WCPEC.1994.520514
O. Evrard, T. Vermeulen, J. Poortmans, M. Caymax, P. Laermans, J. Nijs, R. Mertens
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引用次数: 2

Abstract

Epitaxial layers on heavily doped CZ substrates were grown in an APCVD epitaxial system with different epitaxial layer resistivities: 0.2, 0.5, 1.0 and 2.5 ohm.cm, in order to investigate the influence of the resistivity on the solar cell characteristics. Textured and untextured layers were compared. I-V characteristics under normalised AM 1.5 illumination, dark I-V and spectral response were measured. The efficiencies and the photogenerated current were found to increase with increasing layer resistivities in the range of their investigations.
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薄外延硅电池层电阻率影响的研究
在高掺杂CZ衬底上生长具有不同电阻率的外延层，分别为0.2、0.5、1.0和2.5欧姆。Cm，以研究电阻率对太阳能电池特性的影响。对纹理层和非纹理层进行比较。测量了归一化am1.5照明下的I-V特性、暗I-V和光谱响应。在他们的研究范围内，效率和光产生的电流随着层电阻率的增加而增加。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)
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