{"title":"Compact spin transfer torque non-volatile flip flop design for power-gating architecture","authors":"Karim Ali, Fei Li, S. Lua, C. Heng","doi":"10.1109/APCCAS.2016.7803911","DOIUrl":null,"url":null,"abstract":"This paper proposes a compact spin transfer torque non-volatile flip-flop (STT-NVFF) design. The proposed NVFF adds four transistors and two complementary magnetic tunnel junctions (MTJs) over a standard volatile flip-flop with only 18% area overhead. The NVFF utilizes a low power/ fast switching MTJ that permits the elimination of the write circuitry existing in conventional STT-NVFFs. The proposed NVFF is at least 80% smaller area than conventional STT-NVFFs that uses write circuitry with, at least, the same energy efficiency. It achieves a low backup energy of 111 fJ and restore energy of 6.9 fJ within 3 ns and 0.16 ns respectively. Moreover, it realizes a 72% reduction in break-even point (BEP) and a 10% area reduction compared to an STT-NVFF employing the latch as a writer.","PeriodicalId":6495,"journal":{"name":"2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCCAS.2016.7803911","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
This paper proposes a compact spin transfer torque non-volatile flip-flop (STT-NVFF) design. The proposed NVFF adds four transistors and two complementary magnetic tunnel junctions (MTJs) over a standard volatile flip-flop with only 18% area overhead. The NVFF utilizes a low power/ fast switching MTJ that permits the elimination of the write circuitry existing in conventional STT-NVFFs. The proposed NVFF is at least 80% smaller area than conventional STT-NVFFs that uses write circuitry with, at least, the same energy efficiency. It achieves a low backup energy of 111 fJ and restore energy of 6.9 fJ within 3 ns and 0.16 ns respectively. Moreover, it realizes a 72% reduction in break-even point (BEP) and a 10% area reduction compared to an STT-NVFF employing the latch as a writer.