Compact spin transfer torque non-volatile flip flop design for power-gating architecture

Karim Ali, Fei Li, S. Lua, C. Heng
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引用次数: 10

Abstract

This paper proposes a compact spin transfer torque non-volatile flip-flop (STT-NVFF) design. The proposed NVFF adds four transistors and two complementary magnetic tunnel junctions (MTJs) over a standard volatile flip-flop with only 18% area overhead. The NVFF utilizes a low power/ fast switching MTJ that permits the elimination of the write circuitry existing in conventional STT-NVFFs. The proposed NVFF is at least 80% smaller area than conventional STT-NVFFs that uses write circuitry with, at least, the same energy efficiency. It achieves a low backup energy of 111 fJ and restore energy of 6.9 fJ within 3 ns and 0.16 ns respectively. Moreover, it realizes a 72% reduction in break-even point (BEP) and a 10% area reduction compared to an STT-NVFF employing the latch as a writer.
紧凑型自旋传递扭矩非易失性触发器设计的电源门结构
提出了一种紧凑的自旋传递转矩非易失性触发器(STT-NVFF)设计。拟议的NVFF在一个标准的易失性触发器上增加了四个晶体管和两个互补磁隧道结(mtj),面积开销仅为18%。NVFF采用低功耗/快速开关MTJ,消除了传统stt -NVFF中存在的写电路。与使用写入电路的传统stt -NVFF相比,该NVFF的面积至少缩小了80%,但至少具有相同的能效。在3 ns和0.16 ns内分别实现了111 fJ的低备份能量和6.9 fJ的恢复能量。此外,与使用锁存器作为写入器的STT-NVFF相比,它实现了72%的盈亏平衡点(BEP)减少和10%的面积减少。
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