3D Single Gaas Co-Axial Nanowire Solar Cell for Nanopillar-Array Photovoltaic Device

Q4 Computer Science
Khomdram Jolson Singh, Chelsea Leiphrakpam, Nongthombam Palbir Singh, N. Singh, Subir Kumar Sarkar
{"title":"3D Single Gaas Co-Axial Nanowire Solar Cell for Nanopillar-Array Photovoltaic Device","authors":"Khomdram Jolson Singh, Chelsea Leiphrakpam, Nongthombam Palbir Singh, N. Singh, Subir Kumar Sarkar","doi":"10.5121/IJCSA.2014.4309","DOIUrl":null,"url":null,"abstract":"Nanopillar array photovoltaics give unique advantages over today’s planar thin films in the areas of optical properties and carrier collection, arising from their 3D geometry. The choice of the material system, however, is essential in order to gain the advantage of the large surface/interface area associated with nanopillars. Therefore, a well known Si and GaAs material are used in the design and studied in this nanowire application. This work calculates and analyses the performance of the coaxial GaAs nanowire and compared with that of Si nanowire using a semi-classical method. The current-voltage characteristics are investigated for both under dark and AM1.5G illumination. It is found that GaAs nanowire gives almost double efficiency with its counterpart Si nanowire. Their TCAD simulations can be validated reasonably with that of published experimental result.","PeriodicalId":39465,"journal":{"name":"International Journal of Computer Science and Applications","volume":"4 1","pages":"91-100"},"PeriodicalIF":0.0000,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Computer Science and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5121/IJCSA.2014.4309","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Computer Science","Score":null,"Total":0}
引用次数: 1

Abstract

Nanopillar array photovoltaics give unique advantages over today’s planar thin films in the areas of optical properties and carrier collection, arising from their 3D geometry. The choice of the material system, however, is essential in order to gain the advantage of the large surface/interface area associated with nanopillars. Therefore, a well known Si and GaAs material are used in the design and studied in this nanowire application. This work calculates and analyses the performance of the coaxial GaAs nanowire and compared with that of Si nanowire using a semi-classical method. The current-voltage characteristics are investigated for both under dark and AM1.5G illumination. It is found that GaAs nanowire gives almost double efficiency with its counterpart Si nanowire. Their TCAD simulations can be validated reasonably with that of published experimental result.
用于纳米柱阵列光伏器件的三维单砷化镓同轴纳米线太阳能电池
纳米柱阵列光伏由于其三维几何结构,在光学性质和载流子收集方面比当今的平面薄膜具有独特的优势。然而,为了获得与纳米柱相关的大表面/界面面积的优势,材料系统的选择是必不可少的。因此,在纳米线的设计和研究中使用了一种众所周知的Si和GaAs材料。本文采用半经典方法对同轴砷化镓纳米线的性能进行了计算和分析,并与硅纳米线进行了比较。研究了在黑暗和AM1.5G照明下的电流-电压特性。研究发现,砷化镓纳米线的效率几乎是硅纳米线的两倍。他们的TCAD仿真可以与已发表的实验结果相比较,得到合理的验证。
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International Journal of Computer Science and Applications
International Journal of Computer Science and Applications Computer Science-Computer Science Applications
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期刊介绍: IJCSA is an international forum for scientists and engineers involved in computer science and its applications to publish high quality and refereed papers. Papers reporting original research and innovative applications from all parts of the world are welcome. Papers for publication in the IJCSA are selected through rigorous peer review to ensure originality, timeliness, relevance, and readability.
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