High-peak-power subnanosecond diode-pumped passively Q-switched microchip laser

Abstract

Diode-pumped passively Q-switched solid-state laser with extremely short high-peak-power pulses are of potential interest for numerous applications. In this paper we present a resonator that is formed by a coated c-cut Nd:GdVO/sub 4/ or Nd:YVO/sub 4/ crystal and a coated Cr/sup 4+/:YAG crystal. The studies of the present performance indicate that c-cut Nd:GdVO/sub 4/ and Nd:YVO/sub 4/ crystal are very convenient material for short pulse (sub-nanosecond) and high-peak power lasers. It is demonstrated that at 2 W pump power, 17.8 nJ pulses of 0.85 ns duration at a pulse repetition rate of 13 kHz can be generated in the c-cut Nd:GdVO/sub 4/ and 18 nJ pulses of 0.85 ns duration at a pulse repetition rate of 13.5 kHz at 2.4 W pump power in the c-cut Nd:YVO/sub 4/.