Effects of Electroplating Process Parameters on Properties of Co-electroplated Au-Sn alloy

Chunyan Lu, F. Huang, Mingliang L. Huang
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Abstract

With the development of flip-chip packaging technology in high powered light-emitting diode (LED), the size of bump which plays a vital role to maintain the reliability of interconnects continues to decrease. Au-30at.%Sn eutectic alloy is one of the most promising lead-free solders, which has been widely used in LED packaging, owing to its excellent mechanical property and thermal conductivity. In the present work, a relatively stable non-cyanide electroplating solution was obtained. The co-electrodeposited films with bright silver surface and fine crystal grains were obtained, when the peak current density was between 25 mA/cm2 and 30 mA/cm2. Chronopotentiometry analysis indicated that the irregular and coarsened particles appeared under a relatively low current density. The optimal co-electroplating temperature of Au-Sn alloy was between 30 °C and 40 °C, at which the co- electrodeposited film has a nearly eutectic composition with a bright silver surface and fine crystal grains. The cathodic polarization curve showed the effect of different plating temperature on the co-deposition Au-Sn alloy. When the plating temperature was between 20 °C and 60 °C, the coelectrodeposition of Au-Sn alloy were occurred at -797 mV.
电镀工艺参数对共电镀金-锡合金性能的影响
随着大功率发光二极管(LED)倒装封装技术的发展,对保持互连可靠性起着至关重要作用的凸点尺寸不断减小。Au-30at。锡共晶合金因其优异的机械性能和导热性,在LED封装中得到了广泛的应用,是最有前途的无铅焊料之一。在本工作中,获得了一种相对稳定的无氰电镀液。当峰值电流密度在25 ~ 30 mA/cm2之间时,可获得表面银亮、晶粒细的共电沉积膜。时间电位分析表明,在较低的电流密度下,出现不规则和粗化的颗粒。金-锡合金的最佳共电镀温度为30 ~ 40℃,此时共电镀膜具有近共晶成分,表面银白色,晶粒细。阴极极化曲线显示了不同电镀温度对共沉积金-锡合金的影响。当镀温在20℃~ 60℃之间时,在-797 mV下发生了金-锡合金的共电沉积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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