A comparative study of dynamic characteristics on 16-nm-gate planar CMOS and bulk FinFETs' differential amplifier

Hui-Wen Cheng, Yiming Li
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引用次数: 1

Abstract

The performance comparison of differential amplifier between 16-nm planar CMOS and FinFET with different AR are conducted. The results of this study show that the FinFET exhibits excellen DC characteristic than other structures. The differential amplifier with a higher gain was also obtained using FinFET. We are currently studying the effect of device variability on dynamic characteristics of differential amplifier.
16纳米栅极平面CMOS与体finfet差分放大器动态特性的比较研究
比较了16nm平面CMOS和不同AR条件下FinFET差分放大器的性能。研究结果表明,与其他结构相比,FinFET具有优异的直流特性。利用FinFET还获得了具有更高增益的差分放大器。目前,我们正在研究器件可变性对差分放大器动态特性的影响。
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