Fitting of 2-dimensional polynomial device model based on simulated voltage and current spectra

J. Aikio, T. Rahkonen
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引用次数: 9

Abstract

This paper presents a fitting technique for polynomial 2-dimensional nonlinearity, based on voltage current spectra. It will be shown that despite the strongly correlating controlling voltages, the nonlinear 2-dimensional drain-source current (I/sub DS/) of the 30 W RF power transistor model can be fitted. Furthermore, a simplified Volterra presentation of the 3rd order intermodulation distortion (IM3) contributors of I-V and Q-V sources can be constructed. The results match well with the data simulated using harmonic balance. Also IM3 phasors of the input and output of the device are presented. The analysis shows that the total output IM3 current is dominated by the distortion from I/sub DS/. Also a significant portion of the IM3 current is caused by the fact that output IM3 voltage appears across linear but large drain-source capacitance (C/sub DS/).
基于模拟电压和电流谱的二维多项式器件模型拟合
本文提出了一种基于电压电流谱的多项式二维非线性拟合技术。结果表明,尽管控制电压有很强的相关性,但30w射频功率晶体管模型的非线性二维漏源电流(I/sub / DS/)是可以拟合的。此外,可以构造I-V和Q-V源的三阶互调失真(IM3)贡献者的简化Volterra表示。结果与谐波平衡模拟结果吻合较好。并给出了该器件输入和输出的IM3相量。分析表明,总输出IM3电流主要受I/sub DS/的畸变影响。此外,IM3电流的很大一部分是由输出IM3电压出现在线性但大漏源电容(C/sub DS/)上引起的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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