Surface wave microplasma for localized etching

J. Narendra, J. Zhang, T. Grotjohn, N. Xi, J. Asmussen
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Abstract

A microwave re-entrant cavity is applied to create a miniature beam of plasma species. A miniature microwave plasma discharge is created using 2.45 GHz microwave energy to generate a discharge inside 1-2 mm inner diameter (i.d.) tubes with a micromachined aperture on the end. Through this aperture the plasma stream for materials processing is formed. The diameter of the plasma stream considered in this study ranges from 2 millimeters down to 10's microns. The I/V characteristics obtained from probe measurements show that the plasma ions pass through the aperture with a aperture hole diameter as small as 14 microns. Additional measurements of the microplasma generated in the discharge tube are performed to determine the electron temperature and gas temperature. Langmuir probe measurements give an electron temperature of approximately 2 eV when the pressure is in the range of 1 - 5 Torr. Optical emission spectroscopy measurements of argon/nitrogen discharge mixtures at 1 Torr in a 2 mm tube with 33 W microwave power give a temperature of 600K - 1200K dependent on the percent argon and nitrogen. The plasma discharge in the tube discharge region is modeled using both a global model and a surface wave discharge model. The flow of the plasma discharge/beam from the source, through the aperture, and down to the substrate surface is also modeled. The modeling results will be compared to experimental results for the size and shape of the region processed by the plasma discharge/beam. A CAD-guided automated path generation system is developed to assist manufacturing micro-structures/patterns automatically using the microplasma applicator. An argon/SF feed gas mixture is used to create a plasma stream with radicals for silicon etching. Also, the etching of Ultra- nanocrystalline Diamond (UNCD) is performed using an argon/oxygen plasma. Data will be reported on the etch results including etch rate and pattern profile for both gas chemistries.
局部蚀刻用表面波微等离子体
应用微波再入腔来产生等离子体的微型光束。利用2.45 GHz微波能量在1-2 mm内径(i.d)管内产生放电,并在末端形成微机械孔,形成微型微波等离子体放电。通过这个孔形成用于材料加工的等离子体流。本研究考虑的等离子体流直径范围从2毫米到10微米。探针测量得到的I/V特性表明,等离子体离子通过孔径孔径小至14微米的孔径。对放电管中产生的微等离子体进行额外的测量,以确定电子温度和气体温度。当压力在1 - 5 Torr范围内时,Langmuir探针测量得到的电子温度约为2ev。在2毫米管中以33 W微波功率测量1 Torr氩气/氮气放电混合物的光学发射光谱,根据氩气和氮气的百分比,测量温度为600K - 1200K。采用整体模型和表面波放电模型对管放电区域的等离子体放电进行了模拟。等离子体放电/光束从源,通过孔径,并下降到基板表面的流动也被建模。模拟结果将与实验结果进行比较,以确定等离子体放电/光束处理区域的大小和形状。开发了一种cad引导的自动路径生成系统,以帮助使用微等离子体涂抹器自动制造微结构/图案。在硅蚀刻过程中,采用氩气/SF进料气混合物产生具有自由基的等离子体流。同时,利用氩/氧等离子体对超纳米晶金刚石进行了刻蚀。数据将报告蚀刻结果,包括蚀刻速率和两种气体化学的模式剖面。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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