Fin Bending Mitigation and Local Layout Effect Alleviation in Advanced FinFET Technology through Material Engineering and Metrology Optimization

2019 Symposium on VLSI Technology Pub Date : 2019-06-01 DOI:10.23919/VLSIT.2019.8776517

T. Wen, B. Colombeau, C.l. Li, S. Liu, B. Guo, H. Meer, M. Hou, B. Yang, H.C. Feng, C. Hsu, C.C. Huang, Y. Tasi, H.P. Chen, S. Huang, C.W. Huang, C. Chen, J. Lin, K. Shim, J. Kuo, S. Lee, L. Holcman, K. Nafisr, J. Fernandez, D. Fung, N. H. Yang, J.Y. Wu, G. Hung

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引用次数: 5

Abstract

In advanced FinFET devices, STI gap fill and $\vert \text{LD}_{0}$ stress are responsible for fin defects, fin bending as well as device performance degradations due to the local layout effect (LLE). In this paper, for the first time, we look at different ways to modulate the stress from the Flowable CVD (FCVD) films either by additional UV treatment and/or ion beam treatment (hot Helium implantation). By leveraging in-line e-beam metrology capabilities of PROVision™ for massive measurements of critical dimensions (CDs), the process impact on fin spacing and LLEs are characterized and analyzed. Significant improvement for LLE is observed for nFET device which correlates to fin bending improvement. In addition, ~5% drive current gain for pFET is observed after $\text{ILD}_{0}$ stress optimization.

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基于材料工程和计量优化的先进FinFET技术中翅片弯曲缓解和局部布局效应缓解

在先进的FinFET器件中，STI间隙填充和$\vert \text{LD}_{0}$应力是导致翅片缺陷、翅片弯曲以及由于局部布局效应(LLE)导致的器件性能下降的原因。在本文中，我们首次研究了通过额外的紫外处理和/或离子束处理(热氦注入)来调节可流动CVD (FCVD)薄膜应力的不同方法。通过利用PROVision™的在线电子束测量功能对关键尺寸(cd)进行大规模测量，表征和分析了工艺对翅片间距和lle的影响。我们观察到，nFET器件的LLE有显著的改善，这与翅片弯曲的改善有关。此外，经过$\text{ILD}_{0}$应力优化后，fet的驱动电流增益可达~5%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2019 Symposium on VLSI Technology

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