Traps in AlGaInP materials and devices lattice matched to GaAs for multi-junction solar cells

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI:10.1109/PVSC.2010.5616430

A. Arehart, M. Brenner, Z. Zhang, K. Swaminathan, S. Ringel

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引用次数: 13

Abstract

Deep levels in solid-source MBE-grown n- and p-type (Al0.09Ga0.91)0.51In0.49P are investigated using deep level transient spectroscopy (DLTS). These results are correlated with background oxygen impurities measured by secondary ion mass spectroscopy and electrical properties using Hall effect. Oxygen impurity concentration is found to depend weakly on substrate offcut conditions in MBE-grown AlGaInP films. This is used to investigate the role of oxygen on deep levels in the n- and p-type samples using (100) GaAs substrates with three different substrate offcut conditions (A, B, and C). The DLTS of n-type AlGaInP reveals deep levels at EC-0.22, EC-0.31, EC-0.69 eV and EC-1.0 eV. The EC-0.69 eV concentration tracked oxygen incorporation while the other levels decreased while the oxygen incorporation increased indicating possible secondary offcut effects. In general, we find a direct correlation between reduced carrier compensation, increased carrier mobility, lower trap concentration and lower oxygen content as a function of systematic changes in substrate offcut conditions.

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多结太阳能电池中与砷化镓晶格匹配的AlGaInP材料和器件中的陷阱

利用深能级瞬态光谱(DLTS)研究了n型和p型(Al0.09Ga0.91)0.51In0.49P型固体源mbe的深能级。这些结果与二次离子质谱法测量的本底氧杂质和霍尔效应的电学性质有关。在mbe生长的AlGaInP薄膜中，氧杂质浓度对底物边缘条件的依赖性较弱。使用(100)GaAs衬底，采用三种不同的衬底切割条件(A、B和C)，研究了氧在n型和p型样品中深层水平的作用。n型AlGaInP的DLTS显示深层水平为EC-0.22、EC-0.31、EC-0.69 eV和EC-1.0 eV。EC-0.69 eV浓度跟踪氧掺入，而其他水平随氧掺入的增加而降低，表明可能存在二次附带效应。总的来说，我们发现载流子补偿的减少、载流子迁移率的增加、陷阱浓度的降低和氧含量的降低作为底物边缘条件系统变化的函数之间存在直接关联。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2010 35th IEEE Photovoltaic Specialists Conference

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