Potential and electric field model for 18 nm SG tunnel field effect transistor

Abstract

In this paper, a new two dimensional (2D) analytical model of the single gate (SG) silicon-on-insulator (SOI) tunnel field effect transistors (TFETs) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. Analytical expressions for surface potential and electric field are derived. The validity of the proposed model is tested for device scaled to 18-nm length and the analytical results are compared with TCAD simulations.