Co-Design for Low Warpage and High Reliability in Advanced Package with TSV-Free Interposer (TFI)

F. Che, M. Kawano, M. Ding, Y. Han, S. Bhattacharya
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引用次数: 13

Abstract

TSV-Free Interposer (TFI) technology eliminates TSV fabrication and reduces manufacturing and material cost. Co-design modelling methodology is established for TFI technology with considering wafer process, package assembly and package/board level reliability and thermal performance to optimize structure design, wafer process, assembly process and material selection. Experimental results are used for validating warpage modelling results. Through wafer level modelling, suitable carrier wafer and EMC materials are recommended to control wafer warpage less than 2mm. Effects of package substrate coefficient of thermal expansion (CTE) and stiffener on assembly induced package warpage are simulated to reduce package warpage. The recommended materials and geometry design based on reliability are aligned with that from wafer and package warpage simulation results. The final test vehicle (TV) design and material selection are determined based on co-design modelling results for achieving successful TFI wafer process and package assembly process and long term package/board level reliability.
基于TSV-Free Interposer (TFI)的先进封装低翘曲高可靠性协同设计
TSV- free Interposer (TFI)技术消除了TSV制造,降低了制造和材料成本。建立了TFI技术的协同设计建模方法,考虑晶圆工艺、封装封装和封装/板级可靠性和热性能,优化结构设计、晶圆工艺、封装工艺和材料选择。实验结果用于验证翘曲建模结果。通过晶圆级建模,推荐合适的载流子晶圆和EMC材料,以控制晶圆翘曲小于2mm。为了减小封装翘曲,模拟了封装衬底热膨胀系数(CTE)和加强筋对封装翘曲的影响。基于可靠性的推荐材料和几何设计与晶圆和封装翘曲模拟结果一致。最终的测试车(TV)设计和材料选择是根据共同设计建模结果确定的,以实现成功的TFI晶圆工艺和封装组装工艺以及长期封装/板级可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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