Surface plasmons on highly doped InP

Abstract

Silicon doped InP is grown by metal-organic vapor phase epitaxy (MOVPE) using optimized growth parameters to achieve high free carrier concentration. Reflectance of the grown sample in mid-IR range is measured using FTIR and the result is used to retrieve the parameters of the dielectric function. The derived dielectric function is used to simulate the excitation of surface plasmons by a diffraction grating made of the grown material. The grating structure is fabricated using standard nanofabrication techniques. Spectral features from the grating agree well with the simulations and show spp coupling at predicted angles of incidence and wavelengths.