A logic-compatible embedded flash memory featuring a multi-story high voltage switch and a selective refresh scheme

Abstract

A logic-compatible embedded flash memory that uses no special devices other than standard core and IO transistors is demonstrated in a low-power standard logic process having a 5nm tunnel oxide. An overstress-free high voltage switch expands the cell VTH window by >;170% while a 5T embedded flash memory cell with a selective row refresh scheme is employed for improved endurance.