Introduction of Sr into Bi2Se3 thin films by molecular beam epitaxy

L. Riney, C. Bunker, S. Bac, J. Wang, D. Battaglia, Yun-Chang Park, M. Dobrowolska, J. Furdyna, X. Liu, B. Assaf
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引用次数: 2

Abstract

SrxBi2Se3 is a candidate topological superconductor but its superconductivity requires the intercalation of Sr by into the van-der-Waals gaps of Bi2Se3. We report the synthesis of SrxBi2Se3 thin films by molecular beam epitaxy, and we characterize their structural, vibrational and electrical properties. X-ray diffraction and Raman spectroscopy show evidence of substitutional Sr alloying into the structure, while transport measurements allow us to correlate the increasing Sr content with an increased n-type doping, but do not reveal superconductivity down to 1.5K. Our results suggest that Sr predominantly occupies sites within a quintuple layer, simultaneously substituting for Bi and as an interstitial. Our results motivate future density functional studies to further investigate the energetics of Sr substitution into Bi2Se3.
分子束外延将Sr引入Bi2Se3薄膜
SrxBi2Se3是一种候选的拓扑超导体,但其超导性需要Sr by嵌入到Bi2Se3的范德华隙中。本文报道了用分子束外延法制备SrxBi2Se3薄膜,并对其结构、振动和电学性能进行了表征。x射线衍射和拉曼光谱显示了Sr取代合金进入结构的证据,而输运测量使我们能够将Sr含量的增加与n型掺杂的增加联系起来,但没有发现低于1.5K的超导性。我们的结果表明,Sr主要占据五层内的位置,同时取代Bi并作为间隙。我们的结果激发了未来的密度泛函研究,以进一步研究Sr取代Bi2Se3的能量学。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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