Nanoscale investigation of the power MOSFET by the AFM/KFM/SCFM

Abstract

Power semiconductor devices progress towards high withstand voltages using wide-band-gap semiconductor materials, and parallel integration enabled by microfabrication techniques. We achieved nanoscale observation of power semiconductor device using a scanning probe microscope based on the combination of atomic force microscopy, Kelvin probe force microscopy, and scanning capacitance force microscopy, which provided high spatial resolution and sensitivity. The nanoscale observations were performed through stability control using the frequency-modulation (FM) detection method under a vacuum pressure environment, with and without bias voltage applied to the power semiconductor device.