A theoretical approach to study the temperature dependent performance of a SiC MESFET in sensor application.

Abstract

A temperature dependent theoretical current voltage model of a SiC MESFET is applied to study the performance of the device in sensor application. The linearity performance of the drain current with device temperature is studied for different device parameters like applied biases, gate length and doping concentration. The temperature sensitivity of the device is also calculated for different gate length and doping concentration.