III-V Lasers Emitting at 1.3 to 1.5 µm grown on (001) silicon by MOCVD (invited)

Conference on Lasers and Electro-optics : (CLEO). Conference on Lasers and Electro-optics Pub Date : 2019-05-05 DOI:10.1364/CLEO_SI.2019.STH3N.5

Yu Han, Si Zhu, B. Shi, Qiang Li, K. Lau

引用次数: 0

Abstract

We report the growth of quantum-well and quantum-dot lasers on compliant InP/Si substrates by MOCVD. Laser characteristics at 1.3 to 1.5 µm from whispering-gallery-mode (WGM) micro-lasers, nano-ridge lasers and conventional Fabry-Perot lasers will be described.

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在(001)硅上MOCVD生长的波长为1.3 ~ 1.5 μ m的III-V激光器(邀请)

我们报道了用MOCVD在柔性InP/Si衬底上生长量子阱和量子点激光器。在1.3至1.5 μ m的激光特性，从耳语廊模式(WGM)微激光器，纳米脊激光器和传统的法布里-珀罗激光器将被描述。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference on Lasers and Electro-optics : (CLEO). Conference on Lasers and Electro-optics

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