A 0.6–1.2 THz monolithic imaging array

Abstract

A 19×8 pixel array with a read-out integrated circuit was designed and fabricated in a micro-machined SOI-CMOS process. The pixels are antenna-coupled MOSFET bolometers operating at room temperature in a wide 0.6-1.2 THz band. The read-out circuit features column multiplexed differential amplifiers, offset calibration capability and chopper stabilization. We present the performance of the read-out circuit building blocks, as well as characterization results of the pixels, which demonstrate good detection sensitivity.