{"title":"Photo- and radiation-sensitive materials in microlithography","authors":"M. Tsuda","doi":"10.1016/S0920-2307(87)80005-1","DOIUrl":null,"url":null,"abstract":"<div><p>The origins of the sensitivities of photoresists as well as electron-beam, X-ray and ion-beam resists are elucidated by means of the method of quantum chemistry which is independent of the experimental apparatus and technological errors. The origin of the dry-etch resistance of resist materials is also clarified by the same method. Utilizing the newly obtained concepts on the sensitivity and the dry-etch resistance, one has performed successfully a molecular design of dry-developable resists for photo-, deep-UV, e-beam and SR-X-ray lithographies. The dry-developable resists gave high sensitivity and highly remaining resist patterns in photo- and deep-UV lithographies, high resolution in e-beam lithography and steep-profiled resist patterns in SR lithography. Applications of photo- and radiation-sensitive materials in microlithography as well as techniques for the high resolution and the steep profile of resist patterns are reviewed. The method of quantum chemistry used in the research is also presented.</p></div>","PeriodicalId":100891,"journal":{"name":"Materials Science Reports","volume":"2 5","pages":"Pages 185-314"},"PeriodicalIF":0.0000,"publicationDate":"1987-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0920-2307(87)80005-1","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science Reports","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0920230787800051","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The origins of the sensitivities of photoresists as well as electron-beam, X-ray and ion-beam resists are elucidated by means of the method of quantum chemistry which is independent of the experimental apparatus and technological errors. The origin of the dry-etch resistance of resist materials is also clarified by the same method. Utilizing the newly obtained concepts on the sensitivity and the dry-etch resistance, one has performed successfully a molecular design of dry-developable resists for photo-, deep-UV, e-beam and SR-X-ray lithographies. The dry-developable resists gave high sensitivity and highly remaining resist patterns in photo- and deep-UV lithographies, high resolution in e-beam lithography and steep-profiled resist patterns in SR lithography. Applications of photo- and radiation-sensitive materials in microlithography as well as techniques for the high resolution and the steep profile of resist patterns are reviewed. The method of quantum chemistry used in the research is also presented.
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