T-Channel JLFET THz Detector

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Pub Date : 2019-09-01 DOI:10.1109/IRMMW-THz.2019.8874498

M. Zaborowski, D. Tomaszewski, P. Zagrajek, J. Marczewski

引用次数: 2

Abstract

A new type of JLFET based detector is described in the paper. This JLFET is equipped with additional electrode contacting side of the channel (giving T-like shape of the channel). The device offers higher photoresponse and better SNR and NEP than its standard counterpart. The most promising for application is -0.5 V.. 0 V gate voltage range, where 84 dB SNR is noted.

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t通道JLFET太赫兹探测器

本文介绍了一种新型的基于JLFET的探测器。该JLFET配备了额外的电极接触侧的沟道(给予t形沟道)。与标准器件相比，该器件具有更高的光响应、更好的信噪比和NEP。最有希望的应用是-0.5 V。0 V栅极电压范围，其中84 dB信噪比被注意。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

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