Characterization of Si- delta doped InP grown by low pressure chemical vapor deposition

Abstract

Experimental results obtained from secondary ion mass spectroscopy (SIMS) and low temperature Hall and Shubnikov de Haas measurements (SdH) of in situ planar doped low pressure metalorganic chemical vapor deposition (LP-MOCVD) grown InP epilayers with various Si doses (from 3*10/sup 11/ cm/sup -2/ to 7*10/sup 13/ cm/sup -2/) are presented. Transport measurements give evidence of quantum confinement of the electronic gas in the layers. The electronic density of the delta -doped layers is shown to saturate at n/sub s/=6*10/sup 12/ cm/sup -2/, depending on silicon doses. A comparison of design parameters (silicon doses) with both measured and calculated electronic subband properties is made for each epilayer. The transport properties of lightly Si delta -doped InP layers, under optical excitation at 4.2 K, are described.<>