Crystallization study for MgO in magnetic tunnel junction structure

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2011-12-29 DOI:10.1109/EDSSC.2011.6117679

Yongle Lou, Yu-Ming Zhang, Daqing Xu, Hui Guo, Yimen Zhang, Renxu Jia, Yang Zhao

引用次数: 0

Abstract

The growth and crystallization processes of Co20Fe50B30/MgO/Co20Fe50B30 magnetic tunnel junction structures is investigated with 2θ x-ray diffraction. A MgO layer with thickness of 1.5nm was grown on an amorphous CoFeB layer, and then was crystallized. By proper annealing, the crystal structure of MgO has been improved. The results show important information for preparation of magnetic tunnel junction.

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磁性隧道结结构中氧化镁的结晶研究

用2θ x射线衍射研究了Co20Fe50B30/MgO/Co20Fe50B30磁性隧道结结构的生长和结晶过程。在CoFeB非晶层上生长了厚度为1.5nm的MgO层，并进行了结晶处理。通过适当的退火，改善了MgO的晶体结构。研究结果为磁性隧道结的制备提供了重要信息。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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