Исследование влияния отжига и состава на инфракрасную фотолюминесценцию наногетероструктур GeSiSn/Si с множественными квантовыми ямами

Д.В. Коляда, Д. Д. Фирсов, В. А. Тимофеев, В И Машанов, А.А. Караборчев, О. С. Комков
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Abstract

The results of studying the photoluminescence of nanoheterostructures with multiple Ge1-x-ySixSny/Si quantum wells grown by molecular beam epitaxy on silicon substrates and annealed at different temperatures are presented. As a result of the annealing of the structures, a multifold increase in the intensity of the luminescence peak close in energy to the optical transitions within the multiple quantum wells is observed. The optimal annealing temperature and duration are determined in terms of the intensity of photoluminescence. The luminescent properties of a series of annealed Ge0.93-xSixSn0.07/Si structures with different Ge compositions are investigated. As a result, a shift of the low-temperature photoluminescence peak towards lower energies with an increase in the fraction of germanium in the alloy composition is shown. Thus, the possibility of controlling the luminescence spectrum of Ge0.93-xSixSn0.07/Si nanoheterostructures in the wavelength range of 1.3 −2.0 µm is demonstrated.
退火和化合物对多量子坑gesn /Si纳米异质结构红外光照发光的影响研究
本文介绍了在硅衬底上用分子束外延生长Ge1-x-ySixSny/Si量子阱并在不同温度下退火的纳米异质结构的光致发光研究结果。由于结构的退火,观察到在多个量子阱内接近光学跃迁的能量的发光峰强度增加了数倍。根据光致发光强度确定了最佳退火温度和持续时间。研究了一系列不同锗成分的退火Ge0.93-xSixSn0.07/Si结构的发光性能。结果表明,随着合金成分中锗含量的增加,低温光致发光峰向低能方向移动。从而证明了在1.3 ~ 2.0µm波长范围内控制Ge0.93-xSixSn0.07/Si纳米异质结构发光光谱的可能性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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