Understanding the Mott insulating state in 1T-TaS2 and 1T-TaSe2

Ying Fei, Zongxiu Wu, Wenhao Zhang, Yi Yin
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引用次数: 0

Abstract

In this article, we review the recent progress of the scanning tunneling microscopy studies of 1T-TaS2 and 1T-TaSe2 for bulk single crystals and molecular beam epitaxy monolayer films. We focus on how to understand the Mott insulating state in the whole set of materials, even when the stacking order takes effect. Based on this understanding, we discuss tuning the Mott insulator to a metallic state with different techniques, with Mott physics information revealed from the tuning process. The Kondo physics and quantum spin liquid state of 1T-TaS2 and 1T-TaSe2 are further discussed. This good platform of strong correlation must bring more intriguing phenomenon and physics in the future.

了解 1T-TaS2 和 1T-TaSe2 中的莫特绝缘态
在这篇文章中,我们回顾了 1T-TaS2 和 1T-TaSe2 体单晶和分子束外延单层薄膜的扫描隧道显微镜研究的最新进展。我们的重点是如何理解整组材料中的莫特绝缘态,即使在堆叠阶发生作用时也是如此。基于这种理解,我们讨论了用不同技术将莫特绝缘体调谐为金属态,并从调谐过程中揭示莫特物理学信息。我们还进一步讨论了 1T-TaS2 和 1T-TaSe2 的 Kondo 物理和量子自旋液态。这一良好的强相关平台必将在未来带来更多耐人寻味的现象和物理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
8.20
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