Структурные и оптические свойства двумерных слоев Si и Ge, полученных методом молекулярно-лучевой эпитаксии на подложках CаF-=SUB=-2-=/SUB=-/Si(111)

Abstract

Approaches to the formation of epitaxial structures containing two-dimensional Si and Ge layers embedded in a CaF2 dielectric matrix have been developed. Raman study demonstrates the presence of narrow peaks related to Si-Si and Ge-Ge bond vibrations in the growth plane of structure. In the photoluminescence spectra of the created structures, emission bands, which can be associated with the radiative recombination of charge carriers in two-dimensional Si and Ge layers embedded in CaF2 have been found.