Design of a 220GHz Frequency Quadrupler in 0.13 µ m SiGe Technology

Abstract

This paper presents a 220GHz quadrupler based on the advanced 130nmSiGe HBT process. The circuit adopts differential amplifier structure and active balun to reduce device redundancy of impedance matching network. A 1/4$\lambda$@220GHz harmonic reflector is proposed to reduce the influence of transistor parasitic capacitance and improve the output power. Compensation capacitor technology is introduced to improve the amplitude and phase characteristics of differential signals. This design features an output power of -0.572dBm, a bandwidth of 19 GHz, consumes 0.14 W of dc power and occupies 0.203 mm2 of chip area.